| Semiconductor Laser | Semiconductor Laser Device | LD | LD Device | LD Module |
We offer semiconductor laser (laser diode, LD) devices with maximum output up to several kilowatts in the wavelength range of 375 to 2000 nm.
A semiconductor laser (LD) is a device that generates laser oscillation by passing current through a semiconductor. The mechanism of light emission is similar to that of a light-emitting diode (LED), where light is produced by flowing current in the forward direction of the pn junction. The forward direction means connecting the power supply so that the p-side is positive and the n-side is negative, allowing electrons to flow in from the n-side and holes from the p-side. When these two collide at the junction, light is generated as electrons fall into holes. The structure of the LD consists of an active layer (emission layer) sandwiched between n-type and p-type cladding layers, built on an n-type substrate, allowing current to flow from the electrodes. The end faces of the active layer serve as mirrors, reflecting light. When a voltage is applied in the forward direction, electrons flow from the n-type cladding layer and holes from the p-type cladding layer into the active layer, where they recombine to produce light. This light is not yet laser light; since the refractive index of the cladding layer is lower than that of the active layer, the light is confined within the active layer. Additionally, the end faces of the active layer act as mirrors, causing the light to be amplified as it travels back and forth within the active layer, resulting in stimulated emission (a phenomenon where strong light of coherent phase is generated), which produces laser light. The key difference between this process and that of an LED is that in the case of an LED, the emitted light is released directly to the outside without being reflected back.
- Company：ＹＨＴＣ
- Price：500,000 yen-1 million yen
